? semiconductor components industries, llc, 2016 january, 2016 ? rev. 1 1 publication order number: NSM3005NZ/d NSM3005NZ small signal bjt and mosfet 30 v, 500 ma, pnp bjt with 20 v, 224 ma, n?channel mosfet features ? these devices are pb?free, halogen free/bfr free and are rohs compliant typical applications ? portable devices q1 maximum ratings (t j = 25 c unless otherwise specified) parameter symbol value unit collector?emitter voltage v ceo 30 v collector?base voltage v cbo 40 v emitter?base voltage v ebo 5.0 v collector current i c 500 ma base current i b 50 ma q2 maximum ratings (t j = 25 c unless otherwise specified) parameter symbol value unit drain?to?source v oltage v dss 20 v gate?to?source v oltage v gs 8 v continuous drain current (note 1) steady state t a = 25 c i d 224 ma t a = 85 c 162 t 5 s t a = 25 c 241 pulsed drain current t p = 10 s i dm 673 ma source current (body diode) i s 120 ma thermal characteristics parameter symbol value unit thermal resistance junction?to?ambient (note 1) total power dissipation @ t a = 25 c r ja p d 245 0.8 c/w w operating junction and storage temperature t j , t stg ?55 to 150 c lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. surface mounted on fr4 board using 1 in sq pad size (cu. area = 1.127 in sq [1 oz] including traces). device package shipping ? ordering information nss3005nztag 3000 / tape & reel udfn6 case 517at cool marking diagram www. onsemi.com udfn6 (pb?free) ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. *date code orientation may vary depending upon manufacturing location. 1 6 xx = specific device code m = date code = pb?free package xx m 1 (note: microdot may be in either location) pin connections
NSM3005NZ www. onsemi.com 2 q1 electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics collector?base breakdown voltage v (br)cbo i c = 100 a 40 ? ? v collector?emitter breakdown voltage v (br)ceo i c = 10 ma 30 ? ? v emitter ? base breakdown voltage v (br)ebo i e = 100 a 5.0 ? ? v collector cutoff current i cbo v cb = 25 v, i e = 0 a ? ? 1.0 a emitter cutoff current i ebo v eb = 5.0 v, i c = 0 a ? ? 10 a on characteristics (note 2) dc current gain h fe v ce = 3.0 v, i c = 30 ma 20 ? 100 v ce = 3.0 v, i c = 100 ma 20 ? 100 v ce = 3.0 v, i c = 500 ma 20 ? 100 collector?emitter saturation voltage v ce(sat) i c = 500 ma, i b = 50 ma ? ? 0.4 v base?emitter saturation voltage v be(sat) i c = 500 ma, i b = 50 ma ? ? 1.1 v base?emitter turn?on voltage v be(on) v ce = 1.0 v, i c = 500 ma ? ? 1.0 v q2 electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 20 ? ? v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j i d = ?250 a, ref to 25 c ? 19 ? mv/ c zero gate votlage drain current i dss v gs = 0 v, v ds = 16 v, t j = 25 c ? ? 1.0 a gate?to?source leakage current i gss v ds = 0 v, v gs = 8.0 v ? ? 2.0 a on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 0.4 ? 1.0 v negative threshold temperature coefficient v gs(th) /t j ? ? 1.9 ? mv/ c drain?to?source on resistance r ds(on) v gs = 4.5 v, i d = 100 ma ? 0.65 1.4 v gs = 2.5 v, i d = 50 ma ? 0.9 1.9 v gs = 1.8 v, i d = 20 ma ? 1.1 2.2 v gs = 1.5 v, i d = 10 ma 1.4 4.3 forward transconductance g fs v ds = 5.0 v, i d = 100 ma ? 0.56 ? s charges and capacitances input capacitance c iss f = 1.0 mhz, v gs = 0 v, v ds = 15 v ? 15.8 ? pf output capacitance c oss ? 3.5 ? reverse transfer capacitance c rss ? 2.4 ? total gate charge q g(tot) v gs = 4.5 v, v ds = 15 v; i d = 200 ma ? 0.70 ? nc threshold gate charge q g(th) ? 0.05 ? gate?to?source charge q gs ? 0.14 ? gate?to?drain charge q gd ? 0.10 ? switching characteristics, v gs = 4.5 v (note 3) turn?on delay time t d(on) v gs = 4.5 v, v dd = 15 v, i d = 200 ma, r g = 2 ? 18 ? ns rise time t r ? 35 ? turn?off delay time t d(on) ? 201 ? fall time t f ? 110 ? drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 10 ma ? 0.55 1.0 v 2. pulsed condition: pulse width = 300 msec, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
NSM3005NZ www. onsemi.com 3 typical characteristics ? q1 figure 1. pnp dc current gain vs. collector current figure 2. pnp vce vs. ic i c , collector current (ma) i c , collector current (ma) 1000 100 10 1 0.1 1 10 1000 1000 100 10 1 0.01 0.1 1 figure 3. pnp vbe(sat) vs. ic figure 4. pnp vbe(on) vs. ic i c , collector current (ma) i c , collector current (ma) 1000 100 10 1 0.1 0.2 0.3 0.4 0.5 0.8 0.9 1.1 1000 100 10 1 0.2 0.3 0.4 0.5 0.6 0.7 0.9 1.0 figure 5. pnp vce vs. ib figure 6. pnp capacitance i b , base current (ma) v r , reverse voltage (v) 100 10 1 0.1 0.01 0 0.1 0.3 0.4 0.5 0.7 0.8 1.0 100 10 1 0.1 1 10 100 1000 h fe , dc current gain v ce(sat) , collector?emitter saturation voltage (v) v ce(sat) , base?emitter satura- tion voltage (v) v be(on) , base?emitter (v) v ce , collector?emitter voltage (v) c, capacitance (pf) 0.6 0.7 1.0 0.8 0.2 0.6 0.9 t j = 150 c t j = 25 c t j = ?55 c t j = 150 c t j = 25 c t j = ?55 c i c /i b = 10 t j = 150 c t j = 25 c t j = ?55 c i c /i b = 10 v ce = 1 v t j = 150 c t j = 25 c t j = ?55 c i c = 1.0 ma 10 ma 100 ma 300 ma 500 ma c ibo c obo
NSM3005NZ www. onsemi.com 4 typical characteristics ? q2 figure 7. on?region characteristics figure 8. transfer characteristics v ds , drain?to?source voltage (v) v gs , gate?t o?source voltage (v) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.1 0.3 0.4 0.6 0.7 0.9 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.1 0.3 0.4 0.6 0.7 0.9 1.0 figure 9. on?resistance vs. gate?to?source voltage figure 10. on?resistance vs. drain current and gate voltage v gs , gate voltage (v) i d , drain current (a) 4.0 3.5 4.5 3.0 2.5 2.0 1.5 1.0 0 1.0 2.0 2.5 3.0 4.0 4.5 5.0 1.0 0.7 0.6 0.5 0.3 0.2 0.1 0 0 0.5 1.5 2.0 3.0 3.5 4.5 5.0 figure 11. on?resistance variation with temperature figure 12. drain?to?source leakage current vs. voltage v ds , drain?to?source voltage (v) 18 16 14 12 10 6 4 2 1 10 100 1000 i d , drain current (a) i d , drain current (a) r ds(on) , drain?to?source resistance ( ) r ds(on) , drain?to?source resistance ( ) i dss , leakage (na) r ds(on) , normalized drain?to?source resistance 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.8 ?50 ?25 0 25 50 75 100 125 150 t j , junction temperature ( c) v gs = 4.5 v i d = 100 ma v gs = 1.8 v i d = 20 ma 0.2 0.5 0.8 v gs = 2.5 v 3.0 v 2.0 v 1.5 v 1.8 v 1.2 v 0.2 0.5 0.8 v ds = 5 v t j = 25 c t j = 125 c t j = ?55 c 1.5 3.5 t j = 25 c i d = 0.1 a 0.4 0.8 0.9 1.0 2.5 4.0 t j = 25 c v gs = 2.5 v v gs = 1.8 v 820 t j = 85 c t j = 125 c 3.5 v 4.0 v 4.5 v v gs = 1.5 v 1.6 1.7 0.5 v gs = 4.5 v
NSM3005NZ www. onsemi.com 5 typical characteristics ? q2 t d(on) figure 13. capacitance variation figure 14. gate?to?source and drain?to?source voltage vs. total charge v ds , drain?to?source voltage (v) q g , total gate charge (nc) 18 16 12 10 6 4 2 0 0 5 15 20 25 30 0.7 0.6 0.3 0.2 0.1 0 0 1 2 3 4 5 figure 15. resistive switching time variation vs. gate resistance figure 16. diode forward voltage vs. current r g , gate resistance ( ) v sd , source?to?drain voltage (v) 100 10 1 10 100 1000 1.2 1.1 1.0 0.8 0.7 0.6 0.5 0.4 0.01 0.1 1 10 figure 17. threshold voltage c, capacitance (pf) v gs , gate?t o?source voltage (v) t, time (ns) i s , source current (a) t j , temperature ( c) v gs(th) , gate?t o?source threshold voltage (v) 0.85 ?50 ?25 0 25 50 75 100 125 150 i d = 250 a 0.75 0.65 0.55 0.45 0.35 81420 10 v gs = 0 v t j = 25 c f = 1 mhz c iss c oss c rss v gs = 4.5 v v dd = 15 v t d(off) t r t f 0 3 6 12 15 18 9 0.4 0.5 0.8 v ds , drain?to?source voltage (v) v ds = 15 v t j = 25 c i d = 0.2 a 0.9 1.3 t j = 25 c t j = 125 c t j = ?55 c q t v ds v gs q gs q gd
NSM3005NZ www. onsemi.com 6 package dimensions udfn6 1.6x1.6, 0.5p case 517at issue o notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.15 and 0.30 mm from terminal. 4. coplanarity applies to the exposed pad as well as the terminals. a b e d d1 e1 bottom view b e 6x 0.10 b 0.05 a c c l 6x note 3 2x 0.10 c pin one reference top view 2x 0.10 c 6x a a1 (a3) 0.05 c 0.05 c c seating plane side view k 6x 1 3 4 6 dim min max millimeters a 0.45 0.55 a1 0.00 0.05 a3 0.13 ref b 0.20 0.30 d 1.60 bsc d1 1.14 1.34 e 1.60 bsc e1 0.54 0.74 e 0.50 bsc k 0.20 ??? l 0.15 0.35 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. mounting footprint* l1 detail a 1.34 0.74 0.50 pitch 0.48 6x 1.90 dimensions: millimeters 0.32 1 6x soldermask defined l1 ??? 0.10 d2 0.38 0.58 d2 2x 0.58 2x on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 NSM3005NZ/d cool is a trademark of semiconductor components industries, llc. literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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